diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index ec6841d..93d6df3 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2989,7 +2989,8 @@ static void nand_decode_ext_id(struct mtd_info *mtd, struct nand_chip *chip, * Check for ID length, cell type, and Hynix/Samsung ID to decide what * to do. */ - if (id_len == 6 && id_data[0] == NAND_MFR_SAMSUNG) { + if (id_len == 6 && id_data[0] == NAND_MFR_SAMSUNG && + id_data[5] != 0x00) { /* Calc pagesize */ mtd->writesize = 2048 << (extid & 0x03); extid >>= 2; With this change erasesize looks still incorrectly calculated (4 MB): nand_decode_ext_id:3089 mtd writesize: 4096, oobsize: 128, erasesize: 4194304 writesize also seems wrong, according to the datasheet it is 2 KB. It looks like this Flash really needs to have id_len = 5 assigned, when I forced it: nand_decode_ext_id:3090 mtd writesize: 2048, oobsize: 64, erasesize: 131072 everything looks as specified in the datasheet. The following change eliminates the problem for this particular chip, however it will likely break others. From efab2f7d0a9049588c8b155fab21f8f8c2433b19 Mon Sep 17 00:00:00 2001 From: Sylwester Nawrocki Date: Tue, 13 Nov 2012 00:10:06 +0100 Subject: [PATCH] mtd: Change calculation of length of nand id with repeated pattern Corrects ID length calculation for Samsung K9F1G08U0C NAND Flash, ID: [ec, f1, 00, 95, 40], ec. Signed-off-by: Sylwester Nawrocki --- drivers/mtd/nand/nand_base.c | 2 +- 1 files changed, 1 insertions(+), 1 deletions(-) diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index ec6841d..884e951 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2954,7 +2954,7 @@ static int nand_id_len(u8 *id_data, int arrlen) /* There's a repeated pattern */ if (period < arrlen) - return period; + return period - 1; /* There are trailing zeros */ if (last_nonzero < arrlen - 1)